Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:34:29.821Z Has data issue: false hasContentIssue false
  • English
  • Français

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

Published online by Cambridge University Press:  01 February 2011

Mitsuru Funato ,
Yoshinobu Kawaguchi  and
Shigeo Fujita
Mitsuru Funato
Affiliation:
Kyoto University, Department of Electronic Science and Engineering, Kyoto 615–8501, Japan
Yoshinobu Kawaguchi
Affiliation:
Kyoto University, Department of Electronic Science and Engineering, Kyoto 615–8501, Japan
Shigeo Fujita
Affiliation:
Kyoto University, Department of Electronic Science and Engineering, Kyoto 615–8501, Japan
Get access

Abstract

The dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.12
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Pearton, S., and Fasol, G., Blue Laser Diode, 2nd ed. (Springer, Heidelberg, 2000).Google Scholar
2. Ho, I-h and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701 (1996).Google Scholar
3. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).Google Scholar
4. Narukawa, Y., Kawakami, Y., Funato, M., Sz., Fujita, Sg., Fujita, and Nakamura, S., Appl. Phys. Lett. 70, 981 (1997).Google Scholar
5. Bernardini, F. and Fiorentini, V., phys. stat. sol. (b) 216, 391 (1999).Google Scholar
6. Hangleiter, A., Im, J. S., Kolmer, H., Heppel, S., Off, J., and Scholz, F., MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).Google Scholar
7. Takeuchi, T., Amano, H., and Akasaki, I., Jpn. J. Appl. Phys. 39, 413 (2000).Google Scholar
8. Funato, M., Yamamoto, S., Kaisei, K., Shimogami, K., Sz., Fujita, and Sg., Fujita, Appl. Phys. Lett. 79, 4133 (2001).Google Scholar
9. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B, 56, R10024 (1997).Google Scholar
10. Yamaguchi, M., Yagi, T., Azuhata, T., Sota, T., Suzuki, K., Chichibu, S., and Nakamura, S., J. Phys.: Condens. Matter. 9, 241 (1997).Google Scholar
11. Wright, A. F., J. Appl. Phys. 82, 2833 (1997).Google Scholar
12. Barker, A. S. and Ilegems, M., Phys. Rev. B, 7, 743 (1973).Google Scholar
13. Chin, V. W. L., Tansley, T. L., and Osotchan, T., J. Appl. Phys. 75, 7365 (1994).Google Scholar
14. Yeo, Y. C., Chong, T. C., and Li, M. F., J. Appl. Phys. 83, 1429 (1998).Google Scholar
15. Nanishi, Y., Saito, Y., and Yamaguchi, T., Jpn. J. Appl. Phys. 42, 2549 (2003).Google Scholar
16. The notations are the same as in Ref. [16].Google Scholar
17. Shikanai, A., Azuhata, T., Sota, T., Chichibu, S., Kuramata, A., Horino, K., and Nakamura, S., J. Appl. Phys. 81, 417 (1997).Google Scholar
18. Wei, S.-H. and Zunger, A., Appl. Phys. Lett. 69, 2719 (1996).Google Scholar
19. Walterelt, P., Brandt, O., Trampert, A., Grahn, H. T., Mennlger, J., Ramstelner, M., Relche, M, and Ploog, K. H., Nature, 406, 865 (2000).Google Scholar
20. Sala, F. D., Carlo, A. D., Lugli, P., Bernardini, F., Fiorentini, V., Sholz, R., and Jancu, J.-M., Appl. Phys. Lett. 74, 2002 (1999).Google Scholar
21. Sugawara, M., Phys. Rev. B, 51, 10743 (1995).Google Scholar
22. Kaneta, A., Okamoto, K., Kawakami, Y., Sg., Fujita, Marutsuki, G., Narukawa, Y., and Mukai, T., Appl. Phys. Lett. 81, 4354 (2002).Google Scholar
23. Omae, K, Kawakami, Y., Sg., Fujita, Narukawa, Y., and Mukai, T., Phys. Rev. B, 68, 085303 (2003).Google Scholar