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Proplriies of Post-Hydrogenated Amorphous and Microcrystalline Germanium Films

Published online by Cambridge University Press:  28 February 2011

James R. Woodyard ,
J. Gonzalez-Hernandez ,
R. T. Young  and
J. Piontkowski
James R. Woodyard
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202
J. Gonzalez-Hernandez
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
R. T. Young
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
J. Piontkowski
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

Amorphous and microcrystalline germanium films prepared by glowdischarge and molecular beam deposition were hydrogenated after deposition, using a 3cm Kaufman ion source. The hydrogen profiles were determined using the N15p nuclear resonance reaction. We found that the surface region hydrogen concentration depended on ion beam modification of the material, and the bulk concentration was determined by the hydrogenation conditions and deposition conditions. The light and dark conductivities wee measured before and after hydrogenation. Several orders of magnitude change in the ratios of the conductivities were measured under optimum hydrogenation conditions. The aclivation energy for electrical conductivity was measured and found to be dependent on film structure thickness and hydrogenation conditions.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 65
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Ovshinsky, S.R. and Izu, M., U.S. Patent No. 4,217,374, 1980; S.R. Ovshinsky and A. Madan, U.S. Patent No, 4,226,898, 1980.Google Scholar
2. See for example: Electronic Processes in Non-crystalline Materials, edited by Mott, N.F. and Davis, E.A., Claredon Press, Oxford (1979).Google Scholar
3. Seager, C.H. and Ginley, D.S., Appl. Phys. Lett., 34, 337 (1979).Google Scholar
4. Dube, C. and Hanoka, J.I., Appl. Phys. Lett., 45, 1135 (1984).Google Scholar
5. Hanoka, J., Seager, C.H., Sharp, D.J., and 3.Panitz, K.G., Appl. Phys. Lett., 42, 618 (1983).Google Scholar
6. Tsuo, Y. S. and Milstein, J.B., Appl. Phys. Lett., 45, 971 (1984).Google Scholar
7. Dube, C., 3.1. Hanoka and Sandstrom, D.B., Appl. Phys. Lett., 44, 426 (1984).Google Scholar
8. Lawrence Kazmerski, L., J. Vac. Sci. Technol., A3, 1287 (1985).Google Scholar
9. Pearton, S.J., Tavendale, A.J. and Lawson, E.M., Radiation Effects 79, 21 (1983).Google Scholar
10. Pearton, S.J. and 3.Kahn, M., Phys. Stat. Sol. (a) 78, k65 (1983).Google Scholar
11. Jones, K.S. and Pearton, S.J., Phys. Stat. Sol. (a) 82, K101 (1984).CrossRefGoogle Scholar
12. Harold Kaufman, R., J. Vac. Sci. Technol., 15, 272 (1978).Google Scholar
13. Landford, W.A., Trautvetter, H.P., Ziegler, J.F. and Keller, J., Appl. Phys. Lett., 9, 566 (1979).Google Scholar
14. Kumar, Shailendra and Agarwal, S.C., Appl. Phys. Lett., 45, 575 (1984).Google Scholar
15. Johannessen, J.S., Phys. Stat. Sol. (a) 26, 571 (1974).Google Scholar