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Properties of Zn Implanted GaN

Published online by Cambridge University Press:  21 February 2011

S. Strite ,
P. W. Epperlein ,
A. Dommann ,
A. Rockett  and
R. F. Broom
S. Strite
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland [email protected]
P. W. Epperlein
Affiliation:
IBM Research Division, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland [email protected]
A. Dommann
Affiliation:
Neu-Technikum Buchs, CH-9471 Buchs, Switzerland, [email protected]
A. Rockett
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana/Champaign, Urbana, IL 61801, [email protected]
R. F. Broom
Affiliation:
Department of Materials Science and Metallurgy, Cambridge University, Cambridge CB2 3QZ United Kingdom, [email protected]
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Abstract

We report the optical and structural properties of ion implanted GaN:Zn. Post-implant annealing up to 1100 °C was performed under flowing N2 in both a tube furnace and a rapid thermal annealing (RTA) system, with and without SiNx encapsulation layers. The implantation damage is quantified by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) detects significant rearrangement of implanted Zn only at the highest temperatures and doses investigated. Strain reduction, observed in GaN:Zn annealed at or above 975 °C by high-resolution x-ray diffractometry (HRXRD), indicates successful damage removal. The optical activation of annealed GaN:Zn is measured by photoluminescence (PL). The room temperature (RT) Zn acceptor transition at ∼430 nm is consistently observed in annealed GaN:Zn, but at low efficiency. We conclude that residual implantation damage and/or N loss during annealing limits the optical quality of implanted GaN:Zn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 795
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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