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Properties of Ultrathin Amorphous Silicon Nitride Films on III V Semiconductors

Published online by Cambridge University Press:  22 February 2011

L.J. Huang ,
R. W. M. Kwok ,
W. M. Lau ,
H. T. Tang ,
W. N. Lennard ,
I. V. Mitchell ,
Peter J. Schultz  and
D. Landheer
L.J. Huang
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7
R. W. M. Kwok
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7
W. M. Lau
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario N6A 5B7
H. T. Tang
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7
W. N. Lennard
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7
I. V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7
Peter J. Schultz
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7
D. Landheer
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A OR6
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Abstract

Properties of ultrathin (— lOnm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si (100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500° C also led to changes of the electrical properties in the films but not the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 595
Copyright
Copyright © Materials Research Society 1993

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References

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