Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-07T20:26:20.256Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

Published online by Cambridge University Press:  22 February 2011

I. Golecki ,
J. Marti  and
F. Reidinger
I. Golecki
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
J. Marti
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
F. Reidinger
Affiliation:
Allied-Signal, Inc., Corporate Research and Technology, P.O.B. 1021, Morristown, NJ 07962
Get access

Abstract

Monocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 445
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Madelung, O., ed., Semiconductors, Group IV Elements and III-V Compounds, (Springer-Verlag: Berlin, 1991) pp. 47–57.Google Scholar
2. Ion implantation has limitations of principle in compound semiconductors, due to the spatial separation of interstitials and vacancies of the elemental sub-lattices, created during the collision cascade; see Gibbons, J.F. and Christel, L.A., in Ion Implantation and Beam Processing, Williams, J.S. and Poate, J.M., eds. (Academic Press: Sydney, 1984), pp. 59–79. The resulting defect distributions can only be partially annealed out.Google Scholar
3. Davis, R.F., in The Physics and Chemistry of Carbides, Nitrides and Borides, Freer, R., ed., (Kluwer Academic Publishers: Dordrecht, the Netherlands, 1990) p. 589.Google Scholar
4. Furumura, Y., Doki, M., Mieno, F., Eshita, T., Suzuki, T. and Maeda, M., in Proc. Tenth Intl. Conf. on Chemical Vapor Deposition, ECS Proc. Vol. 87–8, Cullen, G.W., ed. (The Electrochemical Society, Inc.: Pennington, NJ, 1987) p. 435.Google Scholar
5. Golecki, I., in Proc. Symp. on the Comparison of Thin Film Transistors and SOI Technologies, Mater. Res. Soc. Symp. Proc. Vol. 33, 3 (1984).Google Scholar
6. Li, Z. and Bradt, R.C., J. Amer. Cer. Soc. 70, 445 (1987).Google Scholar
7. Touloukian, Y.S., Kirby, R.K., Taylor, R.E. and Lee, T.Y.R., Thermophysical Properties of Matter, Vol 13 (IFI/Plenum: New York, 1977).Google Scholar
8. Golecki, I., Reidinger, F. and Marti, J., Appl. Phys. Lett. 60, 1703 (1992).Google Scholar
9. Golecki, I., Reidinger, F. and Marti, J., in Proc. Symp. on Wide Band-Gap Semiconductors, Mater. Res. Soc. Symp. Proc. Vol. 242, 519 (1992).Google Scholar
10. Nishino, S., Suhara, H., Ono, H. and Matsunami, H., J. Appl. Phys. 61, 4889 (1987).Google Scholar
11. Alterovitz, S.A. and Woollam, J.A., in Handbook of Optical Constants of Solids II, Palik, E.D., ed. (Academic Press, Inc.: Boston, 1991) p. 707.Google Scholar
12. Spitzer, W.G., Kleinman, D.A. and Frosch, C.J., Phys. Rev. 113, 133 (1959).Google Scholar
13. Golecki, I., Glass, H.L, Kinoshita, G. and Magee, T.J., Applications of Surface Science 9, 299 (1981).Google Scholar