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Properties of Single-Crystal Silicon Films on Amorphous SiO2 on Single-Crystal Cubic Zirconia Substrates

Published online by Cambridge University Press:  22 February 2011

I. Golecki ,
R. L. Maddox ,
H. L. Glass ,
A. L. Lin  and
H. M. Manasevit
I. Golecki
Affiliation:
Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research and Development Center
R. L. Maddox
Affiliation:
Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research and Development Center
H. L. Glass
Affiliation:
Science Center 2, 3370 Miraloma Avenue, Anaheim, CA 92803.
A. L. Lin
Affiliation:
Science Center 2, 3370 Miraloma Avenue, Anaheim, CA 92803.
H. M. Manasevit
Affiliation:
Rockwell International Corporation, Defense Electronics Operations, Microelectronics Research and Development Center
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Abstract

A new approach to achieving a large-area silicon-on-insulator technology without pre-patterning is described. (100) Si films are first grown epitaxially on (100) yttria-stabilized cubic zirconia (YSZ) substrates by the pyrolysis of SiH4. The Si side of the <Si>/<YSZ>interface is then oxidized in pyrogenic steam (at 925 °C) or dry oxygen (at 1100°C) to form the structure <Si>/amorphous SiO2/<YSZ>. The oxidation occurs by the rapid diffusion of oxidants through the 0.42 mm thick YSZ substrate; e.g., a 0.3 μm SiO2 layer is obtained in 6 h in steam. The samples are analyzed by Rutherford backscattering and channeling spectrometry, X-ray diffraction, infra-red reflectance, Auger electron spectroscopy and sheet resistance measurements. In addition to forming the preferred Si/SiO2 interface, the back-side oxidation eliminates the most defective part of the Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 37
Copyright
Copyright © Materials Research Society 1985

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References

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