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The Properties Of Phosphorus In Polycrystalline Silicon - A Nuclear Magnetic Resonance Study

Published online by Cambridge University Press:  28 February 2011

Michael J. Mccarthy ,
B. Meyerson ,
M. S. Karim  and
J. A. Reimer
Michael J. Mccarthy
Affiliation:
Dept. of Chemical Engineering, University of California, Berkeley, Berkeley, CA 94720
B. Meyerson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
M. S. Karim
Affiliation:
Dept. of Chemical Engineering, University of California, Berkeley, Berkeley, CA 94720
J. A. Reimer
Affiliation:
Dept. of Chemical Engineering, University of California, Berkeley, Berkeley, CA 94720
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Abstract

Phosphorus segregation at grain boundaries in thin film polycrystalline silicon has been investigated by nuclear magnetic resonance spectroscopy. Amorphous silicon thin frims were deposited by plasma enhanced chemical vapor deposition with 1% phosphine in silane. The films were subsequently annealed at 700°C and 800°C to produce a fine grained polycrystalline material. All of the phosphorus atoms were found to be four-fold coordinated at the grain boundary. The P atoms were found to have three different environments in the grain boundary region. These results will be discussed in relationship to the carrier trapping and dopant segregation models.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 375
Copyright
Copyright © Materials Research Society 1986

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