Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:56:37.584Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Low-Resistivity Undoped indium-Oxide Films Grown by Reactive Ion Plating and Electrochromic Tungsten-Oxide Films Grown by Electron-Beam Evaporation

Published online by Cambridge University Press:  21 February 2011

Y. P. Lee ,
J. I. Jeong ,
J. H. Moon ,
J. H. Hong  and
J. S. Kang
Y. P. Lee
Affiliation:
Sunmoon University, asan, Choongnam, Korea
J. I. Jeong
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
J. H. Moon
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
J. H. Hong
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
J. S. Kang
Affiliation:
Research institute of industrial Science and Technology, Pohang, Kyoungbuk, Korea
Get access

Abstract

The use of gaseous discharge for ion plating and related techniques have been well known to improve coating properties in several ways. IN the arc-induced ion plating (AIIP), the ionization efficiency for the evaporants is so enhanced without any introduction of inert gases that the bias voltage for, and the temperature of the substrate are reduced in the preparation of the coatings. Highly transparent (> 90% transmission in the visible range) and highly conductive (resistivity ≅ 1.5 x 10-4 Ω cm) in-oxide films were deposited at a rate of 500 - 900 Å/min by aIIP of pure in in an O2 atmosphere of 10-4 Torr. Hall-effect measurement revealed that the observed low resistivity is due primarily to the excellent electron mobilty (≥ 70 cm2 / V sec) with carrier density up to 7 х 1020/cm3. Electrochromic WO3 films were also prepared and characterized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 427
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Cheek, G., Genis, A., and Dubow, J. B., Appl. Phys. Lett. 35, 495 (1979).Google Scholar
2 Hjortsberg, A., Hamberg, I., and Granqvist, C. G., Thin Solid Films 90, 323 (1982).Google Scholar
3 Manifacier, J. C., Thin Solid Films 90, 297 (1982).Google Scholar
4 Chopra, K. L., Major, S., and Pandya, D. K., Thin Solid Films 102, 1 (1983).Google Scholar
5 Hamberg, I. and Granqvist, C. G., J. appl. Phys. 60, R123 (1986).Google Scholar
6 Noguchi, S. and Sakata, H., J. Phys. D 13, 1129 (1980).Google Scholar
7 Weiher, R. L. and Ley, R. P., J. appl. Phys. 37, 299 (1966).Google Scholar
8 Wickersham, C. E. and Greene, J., Phys. Status Solidi a 47, 329 (1978).Google Scholar
9 Manifacier, J. C., Szepessy, L., Bresse, J. F., Perotin, M., and Stuck, R., Mater. Res. Bull. 14, 163 (1979).Google Scholar
10 Muranaka, S., Bando, Y., and Tanaka, T., Thin Solid Films 151, 355 (1987).Google Scholar
11 Pan, C. A. and Ma, T. P., Appl. Phys. Lett. 37, 163 (1980).Google Scholar
12 Frank, G. and Kostlin, H., Appl. Phys. a 27, 163 (1982).Google Scholar
13 Deb, S. K., Philos. Mag. 27, 801 (1969).Google Scholar
14 Barna, G. G., J. Electron. Mater. 8, 153 (1979).Google Scholar
15 Jeong, J. I., Hong, J. H., Kang, J. S., Shin, H. J., and Lee, Y. P., J. Vac. Sci.Technol. a 9, 2618 (1991).Google Scholar
16 Lin, A. W., Armstrong, N. R., and Kuwana, T., Anal. Chem. 49, 1228 (1977).Google Scholar
17 Laser, D., Thin Solid Films 90, 317 (1982).Google Scholar