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Properties of HgTe:ZnTe Strained Layer Superlattices Grown by MOVPE

Published online by Cambridge University Press:  21 February 2011

J.T. Mullins ,
P.A. Clifton ,
P.D. Brown ,
D.O. Hall  and
A.W. Brinkman
J.T. Mullins
Affiliation:
Applied Physics Group, S.E.A.S. University of Durham, South Road, Durham DH1 3LE, U.K
P.A. Clifton
Affiliation:
Applied Physics Group, S.E.A.S. University of Durham, South Road, Durham DH1 3LE, U.K
P.D. Brown
Affiliation:
Applied Physics Group, S.E.A.S. University of Durham, South Road, Durham DH1 3LE, U.K
D.O. Hall
Affiliation:
Applied Physics Group, S.E.A.S. University of Durham, South Road, Durham DH1 3LE, U.K
A.W. Brinkman
Affiliation:
Applied Physics Group, S.E.A.S. University of Durham, South Road, Durham DH1 3LE, U.K
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Abstract

HgTe:ZnTe superlattices have been grown by thermal MOVPE at temperatures down to 325°C. At this temperature, interdiffusion is sufficiently low to make superlattice periods as low as 45A practicable. The results of theoretical calculations of the electronic structure of these materials are also reported. These show that the electronic structure may be significantly different to that found for the HgTe:CdTe system due to the large biaxial compression present in the HgTe well layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 357
Copyright
Copyright © Materials Research Society 1990

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References

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