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Properties of Gallium Nitride

Published online by Cambridge University Press:  25 February 2011

Jacques I. Pankove
Jacques I. Pankove*
Affiliation:
SERI, Golden, Colorado 80401 and Department of Electrical and Computer Engineering, University of Colorado, Boulder, Colorado 80309
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Abstract

Gallium nitride has many useful properties that include a large direct gap, high electrical and thermal conductivities, and nearly the hardness of sapphire. GaN decomposes at -100°C, can sustain high electron velocities and exhibit acoustoelectric effects. But two challenges remain: to make it conducting p-type and to synthesize the cubic phase in a large single crystal instead of the usual hexagonal structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 409
Copyright
Copyright © Materials Research Society 1987

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References

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