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The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

Published online by Cambridge University Press:  26 February 2011

Hong Liu
Affiliation:
[email protected], Sichuan University, Department of Materials Science, China, People's Republic of
Zhaohui Pu
Affiliation:
[email protected], Sichuan University, Department of Materials Science, China, People's Republic of
Zhihong Wang
Affiliation:
[email protected], University of electronics science and technology of China, School of microelectronics and solid-state electronics, China, People's Republic of
Huidong Huang
Affiliation:
[email protected], University of electronics science and technology of China, School of microelectronics and solid-state electronics, China, People's Republic of
Yanrong Li
Affiliation:
[email protected], University of electronics science and technology of China, School of microelectronics and solid-state electronics, China, People's Republic of
Dingquan Xiao
Affiliation:
[email protected], Sichuan University, Department of Materials Science, China, People's Republic of
Jianguo Zhu
Affiliation:
[email protected], Sichuan University, Department of Materials Science, China, People's Republic of
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Abstract

Lanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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