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Properties of Epitaxial ZnO Thin Films for GaN and Related Applications

Published online by Cambridge University Press:  15 February 2011

H. Shen
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD 20783-1197, [email protected]
M. Wraback
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD 20783-1197, [email protected]
J. Pamulapati
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD 20783-1197, [email protected]
S. Liang
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855-0909
C. Gorla
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855-0909
Y. Lu
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855-0909
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Abstract

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (1120) ZnO//(0112) Al2O3 and {0001} ZnO//[0111] A12O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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