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Properties of Epitaxial ZnO Thin Films for GaN and Related Applications

Published online by Cambridge University Press:  15 February 2011

H. Shen ,
M. Wraback ,
J. Pamulapati ,
S. Liang ,
C. Gorla  and
Y. Lu
H. Shen
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD 20783-1197, [email protected]
M. Wraback
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD 20783-1197, [email protected]
J. Pamulapati
Affiliation:
U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD 20783-1197, [email protected]
S. Liang
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855-0909
C. Gorla
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855-0909
Y. Lu
Affiliation:
Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08855-0909
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Abstract

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (1120) ZnO//(0112) Al2O3 and {0001} ZnO//[0111] A12O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.60
Copyright
Copyright © Materials Research Society 1999

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References

Refereences

1. Johnson, M. A. L., Fujita, S., Rowland, W. H. Jr, Huges, W. C., Cook, J. W. Jr, and Schetzina, J. F., Journal of Electronic Materials, 25, 855 (1996).Google Scholar
2. Hamdani, F., Botchkarev, A., Kim, W., Moorkoc, H., Yeadon, M., Gibson, J. M., Tsen, S.-C.Y., Smith, D. J., Reynolds, D. C., Look, D. C., Evans, K., Mitchel, C. W. and Hemenger, P., Appl. Phys. Lett., 70, 467 (1997).Google Scholar
3. Hamdani, F., Yeadon, M., Smith, D. J., Tang, H., Kim, W., Salvador, A., Botchkarev, A. E., Gibsor, J. M., Polyakov, A. Y., Skowronski, M., and Morkoc, H., J. Appl. Phys. 83, 983 (1998).Google Scholar
4. Zu, P., Tang, Z. K., Wong, G. K. L., Kawasaki, M., Ohtomo, A., Koinuma, H., and Segawa, Y., Solid State Commun., 103, 459 (1997).Google Scholar
5. Bagnall, D. M., Chen, Y. F., Zhu, Z., Yao, T., Koyama, S., Shen, M. Y., and Goto, T., Appl. Phys. Lett, 70, 2230 (1997).Google Scholar
6. Srikant, V., Sergo, V., and Clarke, D.R., J. Am. Cer. Soc. 78, 1931 (1995).Google Scholar
7. Roth, P., and Williams, D. F., J. Appl. Phys. 52, 6685 (1981)Google Scholar
8. Cockayne, B., and Wright, P. J., J. Crystal Growth, 68, 223 (1984).Google Scholar
9. Gorla, C. R., Emanetoglu, N. W., Liang, S., Mayo, W. E., Lu, Y., Wraback, M., and Shen, H., to be published in J. Applied PhysicsGoogle Scholar
10. Takata, S., Minami, T. and Nanto, H., Jpn. J. Appl. Phys. 20, 1759 (1981).Google Scholar
11. Tanaka, S., Takahashi, K., Sekiguchi, T., Sumino, K., and Tanaka, J., J. Appl. Phys. 77, 4021 (1995).Google Scholar
12. Liang, W.Y. and Yoffe, A.D., Physical Review Letters, 20, 59 (1968).Google Scholar
13. Shen, H., Wraback, M., Pamulapati, J., Dutta, M., Newman, P.G., Ballato, A., and Lu, Y., Appl. Phys. Letts. 62, 2908 (1993).Google Scholar
14. Wraback, M., Shen, H., Liang, S., Gorla, C.R., and Lu, Y., to be published in Appi. Phys. Letts.Google Scholar