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Properties of Amorphous Silicon Thin Film Transistors with Phosphorous-Doped Hydrogenated Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

J. H. Choi ,
C. W. Kim ,
H. G. Yang  and
J. H. Souk
J. H. Choi
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
C. W. Kim
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
H. G. Yang
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
J. H. Souk
Affiliation:
LCD R&D Group II, AMLCD Division, Semiconductor Business, SAMSUNG Electronics Co., Ltd., 449–900, San #24 Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, KOREA
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Abstract

Phosphorous (P) doped hydrogenated microcrystallme silicon (n+μ c-Si:H) films have been prepared by using the hydrogen-diluted plasma enhanced chemical vapor deposition (PECVD) method. The crystallinity of films deposited over the range of SiH4/H2 flow ratios and RF-power is studied by Raman spectroscopy. For a 900 Å thick film deposited at 250°C, a conductivity of 71Ω−1cm−1 and an average crystallinity of 49% is obtained. n+ μ c-Si:H films as well as n+ a-Si:H films are used for both etch stopper and back channel etch type TFTs and the I4-V8 characteristics are compared. For the etch stopper type TFT, the field effect mobility of 0.85 cm2/V.sec, threshold voltages of 2 – 3 V and Ion/Ioff ratio of ∼107 are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 907
Copyright
Copyright © Materials Research Society 1997

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