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Properties and Local Structure of Plasma-Deposited Amorphous Silicon-Carbon Alloys

Published online by Cambridge University Press:  28 February 2011

W. C. Mohr ,
C. C. Tsai  and
R. A. Street
W. C. Mohr
Affiliation:
Present address: Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
C. C. Tsai
Affiliation:
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304.
R. A. Street
Affiliation:
Xerox PARC, 3333 Coyote Hill Road, Palo Alto, CA 94304.
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Abstract

Hydrogenated amorphous silicon-carbon alloy films were plasma-deposited from metnane and silane, varying gas ratio, R.F. power and substrate temperature. Carbon addition increases the optical gap, but also raises the dangling bond density while decreasing conductivity. Low C alloys can be gas-phase doped both p and n type. In the IR spectra the various Si-C stretching modes observed between 650 and 780 cm-1 are explained by back bonding variations. A tentative method of assigning this shift to back bonding of C to the Si is given. A distribution of modes is observed for all alloys, with each mode appearing even at 2% C. The distribution is sensitive to substrate temperature, but is stable after vacuum annealing to 400°C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 319
Copyright
Copyright © Materials Research Society 1986

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References

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