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Propagation of Si-Network in Hr-Cvd and Spontaneous Chemical Deposition

Published online by Cambridge University Press:  26 February 2011

Jun-Ichi Hanna ,
Akira Kamo ,
Masanobu Azuma ,
Naoki Shibata ,
Hajime Shirai  and
Isamu Shimizu
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory, Nagatsuta Midori-ku Yokohama, 227 Japan
Akira Kamo
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Masanobu Azuma
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Naoki Shibata
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Hajime Shirai
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
Isamu Shimizu
Affiliation:
Graduate School at NagatsutaNagatsuta Midori-ku Yokohama, 227 Japan
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Abstract

In comparison with the Si:H films the conformational changes in the Si:H(F) networks of the films prepared by HRCVD and Spontaneous Chemical Deposition were investigated systematically in terms of the effects of the substrate temperature and the promoters. Fluorine participation in the chemical processes of the film growth favored the reduction of terminators without degradation of the Si network and promoted the propagation of closely packed Si network, leading to the crystal growth at a low temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 79
Copyright
Copyright © Materials Research Society 1988

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