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Progress Toward Viable Epitaxial Oxide Ferroelectric Waveguide Heterostructures on Gaas

Published online by Cambridge University Press:  21 February 2011

D. K. Fork ,
J. J. Kingston ,
G. B. Anderson ,
E. J. Tarsa  and
J. S. Speck
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. J. Kingston
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
E. J. Tarsa
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
J. S. Speck
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
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Abstract

Discoveries within the last two years have created possibilities for the fabrication of epitaxial oxide heterostructures on GaAs substrates. In particular, magnesium oxide, MgO, may have broad applications, including its use as a cladding layer in optical waveguides. This report expands upon earlier work by revealing additional epitaxial structures involving lithium niobate which have been grown. There are now five known variants of Z-lithium niobate on GaAs: direct Z-cut growth on GaAs (111)A or B, Z-cut growth on MgO (111)/GaAs (111)A or B, and Z-cut growth on MgO (111)/GaAs (001). Broad in-plane misalignment (about 15°) characterizes the latter structure, whereas the former posses a textural width of 3° to 5° in the plane. All structures contain internal boundaries resulting from 180° rotations about the Zaxis. A critical issue for any ferroelectric heterostructure is its integrity in the presence of thermally induced tensile strain. Approaches to the mitigation of thin fim fracture are discussed and a novel approach to strain relief via ridge waveguide fabrication is reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 113
Copyright
Copyright © Materials Research Society 1993

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References

1. Marcuse, Dietrich, Bell Sys. Tech. J. p. 3187, Dec. 1969.Google Scholar
2. Nashimoto, K., Fork, D. K. and Geballe, T. H., Appl. Phys. Lett. 60, 1199, (1992).Google Scholar
3. Tarsa, E. J., English, J. H., and Speck, J. S., Appl. Phys. Lett. 62, 2332, (1993).Google Scholar
4. Hung, L. S., Zheng, L. R., and Blanton, T. N., Appl. Phys. Lett. 60, 3129, (1992).Google Scholar
5. Tarsa, E. J., Graef, M. De, Clarke, D. R., Gossard, A. C., and Speck, J. S., J. Applied Physics 73, 3276, (1993).Google Scholar
6. Fork, D. K. and Anderson, G. B., Proc. Mater. Res. Soc. Symp. on Pulsed Laser Deposition, Fall Meeting, Dec. 1992, Boston, MA (accepted); Appl. Phys. Lett. (accepted).Google Scholar
7. Ishida, M., Tsuji, S., Kimura, K., Matsunami, H., and Tanaka, T., J. Cryst. Growth 45, 393 (1978).Google Scholar
8. Wegner, A. B., Brueck, S. R. J. and Wu, A. Y., Ferroelectrics, 116, 195, (1991).Google Scholar
9. Yadavalli, S., Yang, M. H., and Flynn, C. P., Phys. Rev. B 41, 7961, (1990).Google Scholar