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Progress on 850 nm Flip Chip Bondable VCSEL for Optical Interconnects

Published online by Cambridge University Press:  10 February 2011

J. E. Cunningham ,
W. Y. Jan ,
K. W. Goossen ,
A. Krishnamoorthy ,
J. A. Walker ,
B. Tseng ,
G. Giaritta ,
J. Lothian ,
R. Kropf  and
I. Brenner
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J. E. Cunningham
Affiliation:
Bell Laboratories Lucent Technology, Holmdel, NJ.
W. Y. Jan
Affiliation:
Bell Laboratories Lucent Technology, Holmdel, NJ.
K. W. Goossen
Affiliation:
Bell Laboratories Lucent Technology, Holmdel, NJ.
A. Krishnamoorthy
Affiliation:
Bell Laboratories Lucent Technology, Holmdel, NJ.
J. A. Walker
Affiliation:
Bell Laboratories Lucent Technology, Holmdel, NJ.
B. Tseng
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
G. Giaritta
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
J. Lothian
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
R. Kropf
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
I. Brenner
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
P. Sciortino
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
G. Chu
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
R. Leibenguth
Affiliation:
Bell Laboratories Lucent Technology, Murray Hill, NJ.
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Abstract

We report here efforts to advance 850 nm VCSELs designed specifically for integration to Si- CMOS. Our VCSEL design is based on an oxidized current aperture and oxidized top mirror with the intent that the device operate as a bottom emitter after integration. Our design also employs intercavity contacts and the first non-alloyed buried contact have been realized. The devices produce resonantly enhanced light emission with record output of 70 μW/st.rad.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 79
Copyright
Copyright © Materials Research Society 1998

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