Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-09T14:55:44.739Z Has data issue: false hasContentIssue false
  • English
  • Français

Progress in large area Selective Silicon Deposition for TFT/LCD Applications

Published online by Cambridge University Press:  16 February 2011

Jun H. Souk  and
Gregory N. Parsons
Jun H. Souk
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
Gregory N. Parsons
Affiliation:
Department of Chemical Engineering, North Carolina State University, Raleigh, NC 27695–7905
Get access

Abstract

We have previously demonstrated selective area deposition of n+ Macrocrystalline silicon at 250°C using time modulated silane flow into a hydrogen plasma, and applied the technique to form high performance top-gate Amorphous silicon TFT's with two mask sets. In this paper, we discuss issues related to process scale-up, including the effect of deposition rate on selectivity loss and non-uniformity. Uniformity can be achieved with higher growth rates by expanding the window for selectivity, and using conditions well within the process limits. We show that lower pressure and higher rf power can enlarge the window by enhancing the hydrogen-Mediated silicon etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 19
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Borland, J.O., Drowley, C.I., Solid State Technology 30 (8), 141 (1987).Google Scholar
[2] Ginsberg, B.J., Burghartz, J., Bronner, G.B., and Mader, S.R., IBM J. Res. Develop. 34, 816 (1990).CrossRefGoogle Scholar
[3] Sedgewick, T.O., Berkenbilt, M., and Kuan, T.S., Appl. Phys. Lett. 54, 2689 (1989).CrossRefGoogle Scholar
[4] Yew, T.R. and Reif, R., J. Appl. Phys. 65, 2500 (1989).Google Scholar
[5] Hiramatsu, M., Ishida, A., Kamimura, T., Kawakyu, Y. Jpn. J. Appl. Phys., 6B, 3106 (1993).Google Scholar
[6] Parsons, G.N., Electron Device Lett. 13, 80 (1992).Google Scholar