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Production Scale Growth of AlGaN/GaN Field Effect Transistors

Published online by Cambridge University Press:  21 March 2011

David Gotthold ,
Shawn Gibb ,
Boris Peres ,
Ian Ferguson ,
Chris Palmer  and
Eric Armour
David Gotthold*
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
Shawn Gibb
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
Boris Peres
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
Ian Ferguson
Affiliation:
Now at School of ECE, Georgia Institute of Technology, Atlanta, GA 30332
Chris Palmer
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
Eric Armour
Affiliation:
EMCORE Corporation, Somerset, NJ 08873
*
*Corresponding email: [email protected]
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Abstract

This paper addresses issues with the manufacturability of AlGaN/GaN FET structures. A robust Metalorganic Chemical Vapor Deposition growth process has been developed that will now allow reliability measurements to be obtained on the resulting devices. During a small scale production run mobilities in excess of 1600 cm2/V.s, sheet charge (Ns) between 0.8x1013 and 1.2x1013 cm-2, and Rs<400 Ω/square with less than 2% variation across the wafer and less than 0.5% variation from wafer to wafer were obtained. Issues for producing a manufacturable process on sapphire and semi-insulating SiC substrates using in-situ monitoring will be addressed. The equivalence of growth on sapphire and SiC substrates for process optimization will be shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.2.1
Copyright
Copyright © Materials Research Society 2002

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