Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T18:01:01.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Production of Midgap Electron Traps by Ga Out-Diffusion in Rapid-Thermal-Processed GaAs with Sio2 Encapsulants

Published online by Cambridge University Press:  26 February 2011

Yutaka Tokuda ,
Hitoshi Suzuki ,
Masayuki Katayama  and
Akira Usami
Yutaka Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Hitoshi Suzuki
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
Masayuki Katayama
Affiliation:
Research Laboratories, Nippondenso Co. Ltd., Nisshin, Aichi 470–01, Japan
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Japan
Get access

Abstract

Production of midgap electron traps in rapid-thermal-processed (RTP) GaAs with sio2 encapsulant has been studied by deep-level transient spec-troscopy in connection with the rapid out-diffusion of Ga through Sio2. Sio2 films of 50 and 1250 nm in thickness have been deposited on LEC n-type (100) GaAs doped with Si. RTP has been performed at 760 and 910°C for 9 s. The broadened DLTS signal consists of four electron traps with the energy levels of Ec - 0.79, 0.83, 0.78 and 0.81 eV. The depth profiles of the total concentration of four traps coincide with those of the decreased carrier concentration multiplied by 0.14 and 0.054 with RTP at 910 and 760°C for 50-nm-thick samples, respectively. These are 0.29 and 0.026 for 1250-nm-thick samples. This means that the origin of these traps is the Ga vacancy formed by the out-diffusion of Ga since the decrease of the carrier concentration by RTP has been ascribed to the formation of VGa-SiGa complex. However, the observation of the persistent photocapacitance quenching effect indicates that these traps are correlated with the As antisite formed by the migration of As into the Ga vacancy. Four kinds of complex defects including the As antisite are produced by RTP which are complex defects of EL2 group.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 853
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Singh, R., J. Appl. Phys. 63, R59 (1988).Google Scholar
2. Haynes, T. E., Chu, W. K., and Picraux, S. T., Appl. Phys. Lett. 50, 1071 (1987).Google Scholar
3. Katayama, M., Tokuda, Y., Ando, N., Inoue, Y., Usami, A., and Wada, T., Appl. Phys. Lett. 54, 2559 (1989).Google Scholar
4. Katayama, M., Tokuda, Y., Inoue, Y., Usami, A., and Wada, T., J. Appl. Phys. 69, 3541 (1991).CrossRefGoogle Scholar
5. Katayama, M., Tokuda, Y., Ando, N., Kitagawa, A., Usami, A., Inoue, Y., and Wada, T., Mater. Res. Soc. Proc. 146, 431 (1989).CrossRefGoogle Scholar
6. Ito, A., Usami, A., Kitagawa, A., Wada, T., Tokuda, Y., and Kano, H., J. Appl. Phys. 69, 2238 (1991).Google Scholar
7. Martin, G. M., Mitonneau, A., and Mircea, A., Electron. Lett. 13, 191 (1977).CrossRefGoogle Scholar
8. Lang, D. V.. J. Appl. Phys. 45, 3023 (1974).Google Scholar
9. Tokuda, Y., Shimizu, N., and Usami, A., Japan. J. Appl. Phys. 18, 309 (1979).Google Scholar
10. Williams, E. W., Phys. Rev. 168, 922 (1968).Google Scholar
11. Taniguchi, M. and Ikoma, T., J. Appl. Phys. 54, 6448 (1983).Google Scholar
12. Vincent, G., Bois, D., and Chantre, A., J. Appl. Phys. 56, 2922 (1984).Google Scholar
13. Lagowski, J., Gatos, H. C., Parsey, J. M., Wada, K., Kaminska, K., and WalakiewicE, W., Appl. Phys. Lett. 40, 342 (1982).Google Scholar