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Processing of Silicon Oxides Thin Films by Thermal LPCVD Starting from Teos Mixtures

Published online by Cambridge University Press:  10 February 2011

Vassilis Em. Vamvakas ,
Dimitris Davazoglou  and
Constantin Vahlas
Vassilis Em. Vamvakas
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR‐15310 Aghia Paraskevi, Greece, [email protected]‐t.gr
Dimitris Davazoglou
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR‐15310 Aghia Paraskevi, Greece, [email protected]‐t.gr
Constantin Vahlas
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR‐15310 Aghia Paraskevi, Greece, [email protected]‐t.gr
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Abstract

A thermodynamic simulation is presented of the low pressure chemical vapor deposition (LPCVD) of silicon oxide thin films starting from TEOS and N2O mixtures within the temperature range 700 – 1300K, by minimizing the total Gibbs energy of the C‐H‐N‐O‐Si chemical system. It was found that at temperatures up to 1173K and N2O/TEOS molar ratios up to approximately 7, SiO2 films contain carbon impurities, while above this ratio deposits are carbon free. A corresponding experimental investigation is also presented where the obtained submicronic films are slightly substoichiometric in oxygen. They contain small carbon impurities the concentration of which decreases with the N2O/TEOS molar ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 291
Copyright
Copyright © Materials Research Society 1997

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