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Processing damage and electrical performance of porousdielectrics in narrow spaced interconnects

Published online by Cambridge University Press:  17 March 2011

F. Iacopi ,
Y. Travaly ,
M. Stucchi ,
H. Struyf ,
S. Peeters ,
R. Jonckheere ,
L.H.A. Leunissen ,
Zs. Tökei ,
V. Sutcliffe  and
O. Richard
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F. Iacopi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Travaly
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Stucchi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Struyf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Peeters
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium affiliate from Lam Research, Fremont, Ca.
R. Jonckheere
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
L.H.A. Leunissen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Zs. Tökei
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
V. Sutcliffe
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium affiliate from Texas Instruments, Dallas, Tx
O. Richard
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M.Van Hove
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium E.E. Dept., Katholieke Universiteit Leuven, Belgium
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Abstract

The damage induced in the low-k material upon exposure to dry etch and ashplasmas is a point of major concern in terms of preservation of thedielectric properties. There is urgent need to assess, classify and quantifythe extent of such damage to allow the optimization of patterning processesand conditions. Meander-fork structures with spacings between 250nm and 70nmare used in this study as vehicle to compare trends in electricalperformance for different dielectrics: SiO2 and two SiOC:H low-kmaterials with pristine k values of 3.0 and 2.6. Here we demonstrate thatthe ‘electrical equivalent damage’ model is a valid and precise methodologyfor assessing dielectric damage upon processing from interline capacitanceevaluation. This analysis allows to distinguish between bulk and sidewallmodification and to quantify the extent of damage. Moreover, it provides aninterpretation for the degradation of leakage current and breakdown field ofthe interline dielectric, revealing different trends whether due to onlysidewall or total damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F1.5
Copyright
Copyright © Materials Research Society 2004

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References

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