Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:33:22.786Z Has data issue: false hasContentIssue false
  • English
  • Français

Processing and Characterization of Inorganic Films for Optical Waveguide Components

Published online by Cambridge University Press:  10 February 2011

S. Ponoth ,
N. Agarwal ,
X. Huang ,
P. D. Persans  and
J. Plawsky
S. Ponoth
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute
N. Agarwal
Affiliation:
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute
X. Huang
Affiliation:
Department of Physics, Rensselaer Polytechnic Institute
P. D. Persans
Affiliation:
Department of Physics, Rensselaer Polytechnic Institute
J. Plawsky
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute
Get access

Abstract

Optical communications are becoming technologically important on progressively shorter length scales. As computer chip speeds increase longer metal wire interconnects become problematic and may limit device performance. Wide bandwidth optical interconnects may be used to address this problem. Silicon oxide and silicon nitride were explored as prospective optical and processing materials in the making of optical interconnects. Etching of slopes, which would be an important process for making optical interconnects, was studied. Slopes with angles ranging from 5 to 50 degrees were fabricated using a silicon oxide / silicon nitride stack.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 597: Symposium PP – Thin Films for Optical Waveguide Devices & Materials … , 1999 , 81
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. North, J.C., McGahan, T.E., Adams, A.C. and Rice, D.W., IEEE Tr. on Electron Devices, 25, no.7, p. 809–12 (1978)Google Scholar
2. Parisi, G.I., Haszko, S.E. and Rozgonyi, G.A., J. Electrochemical Soc., 124, no.6, p. 917–21Google Scholar
3. Boyd, G.D., Coldren, L.A. and Storz, F.G., Applied Physics Letters, 36, 7, p. 583–5 (1980)Google Scholar
4. Randolph Bank, E., PLTMG: A Software package for solving elliptic partial differential equations (SIAM, Philadelphia, 1994).Google Scholar
5. Gupta, M., Rathi, V.K., Thangaraj, R., Agnihotri, O.P., and Chari, K.S., Thin Solid Films, 204, no.1, p. 77–106 (1991).Google Scholar
6. Reynes, B., Ance, C., Stoquert, J.P., Bruyere, J.C., Thin Solid Films, 203, no.1, p. 87–94(1991).Google Scholar
7. Kawai, A., Nagata, H., Jap. J. Applied Phy., 30, p. 121–125 (1991).Google Scholar