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Process-Induced Deformations and Stacking Faults in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Robert S Okojie ,
Xianrong Huang ,
Michael Dudley ,
Ming Zhang  and
Pirouz Pirouz
Robert S Okojie
Affiliation:
[email protected], NASA, Sensors and Electronics Branch, 21000 Brookpark Road,, Mail Stop 77-1, Cleveland, OH, 44136, United States, (216)433-6522, (216)433-8643
Xianrong Huang
Affiliation:
[email protected], State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected], State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Ming Zhang
Affiliation:
[email protected], Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
Pirouz Pirouz
Affiliation:
[email protected], Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
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Abstract

We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.

Keywords

defectsthermal stressestransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B07-02
Copyright
Copyright © Materials Research Society 2006

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References

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