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Process-Induced Deformations and Stacking Faults in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Robert S Okojie ,
Xianrong Huang ,
Michael Dudley ,
Ming Zhang  and
Pirouz Pirouz
Robert S Okojie
Affiliation:
[email protected], NASA, Sensors and Electronics Branch, 21000 Brookpark Road,, Mail Stop 77-1, Cleveland, OH, 44136, United States, (216)433-6522, (216)433-8643
Xianrong Huang
Affiliation:
[email protected], State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected], State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Ming Zhang
Affiliation:
[email protected], Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
Pirouz Pirouz
Affiliation:
[email protected], Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
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Abstract

We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.

Keywords

defectsthermal stressestransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B07-02
Copyright
Copyright © Materials Research Society 2006

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References

[1] Levinshtein, M. E., Mnatsakanov, T. T., Ivanov, P. A., Singh, R., Palmour, J. W., Yurkov, S. N., Solid-State Electronics, (48), p 807–811. (2004).Google Scholar
[2] Lendenmann, H., Dahlquist, F., Johansson, N., Bergman, J., Bleichner, H., and Ovren, C., in Performance and Reliability of High Power SiC Diodes, Nara Centennial Hall, Nara Japan, 2000 (Research and Development Association for Future Electron Devices), p. 125–130.Google Scholar
[3] Okojie, R., Xhang, M., Pirouz, P., Tumakha, S., Jessen, G., and Brillson, L., Mater. Sci. Forum 389–393, 451–454. (2002).Google Scholar
[4] Lindefelt, U., Iwata, H., Öberg, S., and Briddon, P. R., Phys. Rev. B 67, 155204 (2003).Google Scholar
[5] Miao, M. S., Limpijumnong, S., and Lambrecht, W. R. L., Appl. Phys. Lett. 79, 4360–4362 (2001).Google Scholar
[6] Liu, J. Q., Chung, H. J., Kuhr, T., Li, Q., and Skowronski, M., Appl. Phys. Lett. 80, 2111–2113 (2002).Google Scholar
[7] Kuhr, T. A. et al, J. of Appl. Phy., 92(10), 5863–5871. (2002).Google Scholar
[8] Möck, P., Laczik, Z. J., Booker, G. R. and, Materials Science & Engineering, B80, p 91–94, (2001).Google Scholar
[9] Okojie, R. S. and Zhang, M., Mat. Res. Soc. Proc. Vol. 815, 2004.Google Scholar
[10] Frontier Semiconductor, Inc, 1631 North First Street, San Jose, CA 95112 USA. (www.frontiersemi.com).Google Scholar
[11] Ohring, M., Materials Science of Thin Films, Academic Press, Inc., New York. (1992).Google Scholar
[12] Okojie, R. S., Holzheu, T., Huang, X., and Dudley, M., Appl. Phys. Lett. 83, 1971 (2003)Google Scholar