Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-23T12:35:58.661Z Has data issue: false hasContentIssue false
  • English
  • Français

Process-Induced Deformations and Stacking Faults in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Robert S Okojie ,
Xianrong Huang ,
Michael Dudley ,
Ming Zhang  and
Pirouz Pirouz
Robert S Okojie
Affiliation:
[email protected], NASA, Sensors and Electronics Branch, 21000 Brookpark Road,, Mail Stop 77-1, Cleveland, OH, 44136, United States, (216)433-6522, (216)433-8643
Xianrong Huang
Affiliation:
[email protected], State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
[email protected], State University of New York, Dept. Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Ming Zhang
Affiliation:
[email protected], Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
Pirouz Pirouz
Affiliation:
[email protected], Case Western Reserve University, Dept. Materials Science and Engineering, Cleveland, OH, 44106, United States
Get access

Abstract

We used Film Stress Measurement (FSM), Transmission Electron Microscopy (TEM), and High-Resolution X-ray Diffraction (HRXRD) techniques to obtain further knowledge with respect to the deformation, warpage, and stacking faults (SF's) that are induced in n-type 4H-SiC wafers and epilayers when subjected to mechanical polishing and high temperature (1150 oC) processing.

Keywords

defectsthermal stressestransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B07-02
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Levinshtein, M. E., Mnatsakanov, T. T., Ivanov, P. A., Singh, R., Palmour, J. W., Yurkov, S. N., Solid-State Electronics, (48), p 807–811. (2004).Google Scholar
[2] Lendenmann, H., Dahlquist, F., Johansson, N., Bergman, J., Bleichner, H., and Ovren, C., in Performance and Reliability of High Power SiC Diodes, Nara Centennial Hall, Nara Japan, 2000 (Research and Development Association for Future Electron Devices), p. 125–130.Google Scholar
[3] Okojie, R., Xhang, M., Pirouz, P., Tumakha, S., Jessen, G., and Brillson, L., Mater. Sci. Forum 389–393, 451–454. (2002).Google Scholar
[4] Lindefelt, U., Iwata, H., Öberg, S., and Briddon, P. R., Phys. Rev. B 67, 155204 (2003).Google Scholar
[5] Miao, M. S., Limpijumnong, S., and Lambrecht, W. R. L., Appl. Phys. Lett. 79, 4360–4362 (2001).Google Scholar
[6] Liu, J. Q., Chung, H. J., Kuhr, T., Li, Q., and Skowronski, M., Appl. Phys. Lett. 80, 2111–2113 (2002).Google Scholar
[7] Kuhr, T. A. et al, J. of Appl. Phy., 92(10), 5863–5871. (2002).Google Scholar
[8] Möck, P., Laczik, Z. J., Booker, G. R. and, Materials Science & Engineering, B80, p 91–94, (2001).Google Scholar
[9] Okojie, R. S. and Zhang, M., Mat. Res. Soc. Proc. Vol. 815, 2004.Google Scholar
[10] Frontier Semiconductor, Inc, 1631 North First Street, San Jose, CA 95112 USA. (www.frontiersemi.com).Google Scholar
[11] Ohring, M., Materials Science of Thin Films, Academic Press, Inc., New York. (1992).Google Scholar
[12] Okojie, R. S., Holzheu, T., Huang, X., and Dudley, M., Appl. Phys. Lett. 83, 1971 (2003)Google Scholar