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Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

Published online by Cambridge University Press:  28 February 2011

Ying Wu ,
W. Savin ,
T. Fink ,
N. M. Ravindra ,
R. T. Lareau ,
R. L. Pfeffer ,
L. G. Yerke  and
C. Wrenn
Ying Wu
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
W. Savin
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
T. Fink
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
N. M. Ravindra
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
R. T. Lareau
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
R. L. Pfeffer
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
L. G. Yerke
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
C. Wrenn
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
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Abstract

Experimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 305
Copyright
Copyright © Materials Research Society 1992

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References

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