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Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes

Published online by Cambridge University Press:  25 February 2011

Robin M. Dawson ,
J. H. Smith  and
C. R. Wronski
Robin M. Dawson
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA, 16802
J. H. Smith
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA, 16802
C. R. Wronski
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA, 16802
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Abstract

Space charge limited currents of holes in intrinsic hydrogenated amorphous silicon (a-Si:H) have been obtained using novel p+-intrinsic-p+ (p-i-p) structures. The presence of these hole space charge limited currents is verified from their temperature dependence and their dependence on a wide range of intrinsic layer thickness. The carrier transport and space charge limited currents in the p-i-p structures are compared with those of n-i-n structures and the results are discussed in terms of a self consistent density of states in the gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 145
Copyright
Copyright © Materials Research Society 1990

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References

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