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Probing Metal Defects in CCD Image Sensors

Published online by Cambridge University Press:  26 February 2011

William C. McColgin ,
J. P. Lavine  and
C. V. Stancampiano
William C. McColgin
Affiliation:
Eastman Kodak Company, Microelectronics Technology Division, Rochester, NY 14650-2008
J. P. Lavine
Affiliation:
Eastman Kodak Company, Microelectronics Technology Division, Rochester, NY 14650-2008
C. V. Stancampiano
Affiliation:
Eastman Kodak Company, Microelectronics Technology Division, Rochester, NY 14650-2008
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Abstract

We have investigated the role of heavy metals in causing visible pixel defects in Charge Coupled Device (CCD) image sensors. Using a technique we call dark current spectroscopy, we can probe for deep-level traps in the active areas of completed image sensors with a sensitivity of 1 × 109 traps/cm3 or better. Analysis of histograms of dark current images from these sensors shows that the presence of traps causes quantization in the dark current. Different metal traps have characteristic dark current generation rates that can identify the contaminant trap. By examining the temperature dependence of the dark current generation, we have calculated the energy levels and generation cross sections for gold, iron, nickel, and cobalt. Our results show the relationship of these traps to the “white spot” defects reported for image sensors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 713
Copyright
Copyright © Materials Research Society 1995

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