Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-08T02:46:04.671Z Has data issue: false hasContentIssue false
  • English
  • Français

Primary and Secondary Ion Deposition of Epitaxial Semiconductor Films From Laser-Induced Plasmas

Published online by Cambridge University Press:  21 February 2011

D. Lubben ,
S.A. Barneti ,
K. Suzuki  and
J.E. Greene
D. Lubben
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
S.A. Barneti
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
K. Suzuki
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
J.E. Greene
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
Get access

Abstract

Primary and secondary ion deposition of epitaxial semiconductor films from laser-induced plasmas is reported Laser plasmas were generated by focusing 15 ns, 107 to 108 W/cm2 pulses of 5 eV photons from a KrF excimer laser onto Ge and Si wafer targets. Time-of-flight, current-voltage, and film thickness measurements at secondary (i.e., ion) targets indicated that the ions were emitted, with an average energy of ∼40 eV, in a distribution which was strongly peaked in the normal direction. Primary ion deposition was performed by placing substrates on an ion target/substrate heater biased to give additional ion acceleration as required. Secondary deposition was achieved by biasing the ion target, in this case a wafer of the same material as the laser target, sufficiently negative to sputter target material onto a third electrode. Epitaxial Si on (100) Si and Ge on (100) Si and (100) GaAs were obtained by both methods. Hall effect measurements on heteroepitaxial Ge grown at 1 μm/hr on GaAs substrates by primary deposition showed thatfthe films were p-type with hole concentrations of ∼1018 cm−3 and mobilities of ∼150 cm2/V-sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 359
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Greene, J.E. and Barnett, S.A., J. Vac. Sci. Technol. 21, 285 (1982).Google Scholar
2. Bajor, G. and Greene, J.E., J. Appl. Phys. 54, 1579 (1983), and references therein.Google Scholar
3. Greene, J.E., J. Vac. Sci. Technol. B 1, 229 (1983).Google Scholar
4. Harper, J.M.E., in Thin Film Processes, Vossen, J.L. and Kern, W., eds., Academic Press, New York (1978), p. 175.Google Scholar
5. Narusawa, T., Shimizu, S., and Komiya, S., J. Vac. Sci. Technol. 16, 366 (1979).CrossRefGoogle Scholar
6. Shimizu, S. and Komiya, S., J. Vac. Sci. Technol. 18, 765 (1981).Google Scholar
7. Yagi, K., Miyake, K., Tokuyama, T., Low Energy Ion Beams (Inst. Phys. Conf. Ser. No. 38), p. 136 (1978),Google Scholar
7a and Amano, J. and Lawson, R.P.W., J. Vac. Sci. Technol. 14, 690 (1977), and references therein.Google Scholar
8. Smith, Howard M. and Turner, A.F., Appl. Opt. 4, 147 (1965).CrossRefGoogle Scholar
9. See for example, Cheung, J.T., Appl. Phys. Lett. 43, 255 (1983).Google Scholar
10. Zehner, D.M., White, C.W. and Ownby, G.W., Appl. Phys. Lett. 36, 56 (1980)Google Scholar
11. Sze, S.M., Physics of Semiconductor Devices (Wiley-Interscience, New York, 1969).Google Scholar
12. Mrstik, B.J., Surf. Sci. 124, 253 (1983).Google Scholar