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Pressure Ratio (PAs/PGa) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE

Published online by Cambridge University Press:  22 February 2011

M. Lagadas ,
Z. Hatzopoulos ,
M. Calamiotou ,
M. Kayiambaki  and
A. Christou
M. Lagadas
Affiliation:
Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
Z. Hatzopoulos
Affiliation:
Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
M. Calamiotou
Affiliation:
University of Athens, Department of Physics, Athens, Greece
M. Kayiambaki
Affiliation:
Foundation for Research and Technology-Hellas, Institute of Electronic Structure and Laser, Heraklion, Crete, Greece
A. Christou
Affiliation:
University of Maryland, Department of Materials Engineering, College Park, MD, USA
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Abstract

We have investigated the influence of the pressure ratio (PAs4/PGa) on the structural and electrical properties of GaAs layers grown at 250°C by MBE. SEM photographs have revealed smooth surfaces for PAs4/PGa≥15 and Double crystal X-ray rocking curves have shown an increase on the lattice mismatch δaI/a of the L.T. grown layers and high crystalline quality. Resistivity has not been affected by the different values of PAs4/PGa. n-GaAs epilayers grown on top of L.T. buffer layers have their mobility decreased and the electron trap density increased as revealed by Hall and DLTS measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 383
Copyright
Copyright © Materials Research Society 1994

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