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Present Status of III-Nitride Based Photodetectors

Published online by Cambridge University Press:  15 March 2011

Eva Monroy ,
Fernando Calle ,
José Luis Pau ,
Elías Muñoz ,
Franck Omnès ,
Bernard Beaumont  and
Pierre Gibart
Eva Monroy
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
Fernando Calle
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
José Luis Pau
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
Elías Muñoz
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
Franck Omnès
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560-Valbonne, France
Bernard Beaumont
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560-Valbonne, France
Pierre Gibart
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560-Valbonne, France
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Abstract

This paper describes the characteristics of a variety of AlGaN-based photodetectors (photoconductors, metal-semiconductor-metal photodiodes, Schottky photodiodes and p-i-n photodiodes), grown on sapphire by metalorganic vapor phase epitaxy. The features that determine their performance are analyzed. Results using other substrates (epitaxial lateral overgrown GaN, Si) are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T3.7.1
Copyright
Copyright © Materials Research Society 2000

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References

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