Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-29T09:36:02.379Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation, Properties and Applications of Free-Standing Porous Silicon Films

Published online by Cambridge University Press:  28 February 2011

J. Von Behren ,
L. Tsybeskov  and
P. M. Fauchet
J. Von Behren
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627 also at the Technical University of Munich, Garching, Germany
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627 also at the Laboratory for Laser Energetics and at the Institute of Optics
Get access

Abstract

Using special electrochemical etching and lift-off steps, we have fabricated large-area freestanding porous silicon films in the thickness range from 0.1 μm to 50 μm. Their transmission is near 100% in the near infrared which is indicative of very high porosity/low index of refraction films. These optically flat and homogeneous films exhibit no surface and bulk scattering, despite the fact that they did not undergo supercritical drying. The relationship between the absorption coefficient, the luminescence spectrum, and the chemical and structural properties is examined as a function of preparation and post-treatment conditions. Because of their superior optical properties, these films are suitable for many device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 333
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990)Google Scholar
2 Fauchet, P. M. et al. , in "Advanced Photonics Materials for Information Technology", edited by Etemad, Shahab (SPIE, Bellingham WA), SPIE Proc. 2144, 34 (1994)Google Scholar
3 Xie, Y. H. et al. , Phys. Rev. B49, 5386 (1994)Google Scholar
4 Lehmann, V. and Goesele, U., Appl. Phys. Lett. 58, 858 (1991)Google Scholar
5 Koch, F. et al. , Mat. Res. Soc. Symp. Proc. 283, 197 (1993); F. Koch et al, Mat. Res. Soc. Symp. Proc. 298., 319 (1993)Google Scholar
6 Smith, R. L. and Collins, S.D., J. Appl. Phys. 71, Rl (1992)Google Scholar
7 von Behren, J. et al. , "Properties of Ultrathin Films of Porous Silicon", submitted for publicationGoogle Scholar
8 Canham, L. T. et al. , Nature 368, 133 (1994)Google Scholar
9 Gong, T., Nighan, W. L., Fauchet, P. M., Appl. Phys. Lett. 57, 2713 (1990)Google Scholar
10 Fauchet, P. M., "Carrier Dynamics in Porous Silicon: From the Femtosecond to the Second", Mat. Res. Soc. Symp. Proc. 258. (1995)Google Scholar
11 Mauckner, G. et al. , Mat. Res. Soc. Symp. Proc. 283, 109 (1993)Google Scholar
12 Muender, H. et al. , J. Phys. D: Appl. Phys. 22, 1333 (1994)Google Scholar
13 Tsybeskov, L., Vandyshev, Ju. V. and Fauchet, P. M., Phys. Rev. B49, 7821 (1994)Google Scholar