Hostname: page-component-f554764f5-sl7kg Total loading time: 0 Render date: 2025-04-11T18:55:33.305Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of Textured Sn2P2S6 Films and Their Piezoelectric Properties.

Published online by Cambridge University Press:  15 February 2011

E. Arnautova ,
N. Protsenko ,
D. Sandjiev ,
I. Zakharchenko  and
L. Zadorognaya
E. Arnautova
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
N. Protsenko
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
D. Sandjiev
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
I. Zakharchenko
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
L. Zadorognaya
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
Get access

Abstract

Polycrystalline Sn2P2S6 films were prepared by “hot wall” method and studied for possible electronic application. This paper deals with the determination of correlation between the preferred crystallite orientation of the film and its piezoelectric parameters. It is shown that is possible to optimize the piezoelectric properties of Sn2P2S6 films by prescribing the certainrelief of the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 601
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERECES

1. Freik, D.M., Izv. AN SSSR, ser. neorgan. maier. 18(8), 1237–1248 (1982).Google Scholar
2. Sharkan, L.P., Mikulaninez, S.U., Dovgoshei, N.I., Izv. AN SSSR, ser. neorgan. mater. 17(3), 731–735 (1981).Google Scholar
3. Saltykov, S.A., Stereometric metall o graphy. (M: Metallurgia, 1970), p. 375.Google Scholar
4. Rogach, E.D., Protsenko, N.P., Savchenko, E.A., etc., Izv. AN SSSR, ser. phys. 51(12), 2269–2272 (1987).Google Scholar
5. Givargizov, E.L., Artificial epitaxy - the promising technology of the element base of microelectronics, (M: Nauka, 1988), p. 178.Google Scholar
6. Chernobabov, A.I., Turik, A.V., Zh. techn. fiz. 49(10), 2097–2101 (1979).Google Scholar