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Preparation of Textured Sn2P2S6 Films and Their Piezoelectric Properties.

Published online by Cambridge University Press:  15 February 2011

E. Arnautova ,
N. Protsenko ,
D. Sandjiev ,
I. Zakharchenko  and
L. Zadorognaya
E. Arnautova
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
N. Protsenko
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
D. Sandjiev
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
I. Zakharchenko
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
L. Zadorognaya
Affiliation:
Rostov State University, Rostov-on-Don, Russia.
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Abstract

Polycrystalline Sn2P2S6 films were prepared by “hot wall” method and studied for possible electronic application. This paper deals with the determination of correlation between the preferred crystallite orientation of the film and its piezoelectric parameters. It is shown that is possible to optimize the piezoelectric properties of Sn2P2S6 films by prescribing the certainrelief of the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 601
Copyright
Copyright © Materials Research Society 1995

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References

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