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Preparation of Si Thin Films by Spontaneous Chemical Deposition

Published online by Cambridge University Press:  25 February 2011

Jun-Ichi Hanna ,
Akira Kamo ,
Tohru Komiya ,
Hien D. Nguyen ,
Isamu Shimizu  and
Hiroshi Kokado
Jun-Ichi Hanna
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory, Nagatsuta, Midori-ku, Yokohama, 227 Japan
Akira Kamo
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory, Nagatsuta, Midori-ku, Yokohama, 227 Japan
Tohru Komiya
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory, Nagatsuta, Midori-ku, Yokohama, 227 Japan
Hien D. Nguyen
Affiliation:
Graduate School at Nagatsuta, Nagatsuta, Midori-ku, Yokohama, 227 Japan
Isamu Shimizu
Affiliation:
Graduate School at Nagatsuta, Nagatsuta, Midori-ku, Yokohama, 227 Japan
Hiroshi Kokado
Affiliation:
Tokyo Institute of Technology Imaging Science and Engineering Laboratory, Nagatsuta, Midori-ku, Yokohama, 227 Japan
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Abstract

A novel method for preparing photoconductive Si thin films termed “Spontaneous Chemical Deposition”, is proposed, in which silane is decomposed spontaneously by gas phase reactions with fluorine at reduced pressure. With the external parameters in the gas phase reaction such as a gas flow ratio of SiH4 to F2 and the reaction pressure and temperature, the Si-network structure of the films can be controlled intentionally, resulting in a reduction of the hydrogen content, CH and a variety of the films from “amorphous” to “microcrystalline”.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 11
Copyright
Copyright © Materials Research Society 1989

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References

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