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Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices

Published online by Cambridge University Press:  11 February 2011

M. Holtz ,
G. Kipshidze ,
A. Chandolu ,
J. Yun ,
B. Borisov ,
V. Kuryatkov ,
K. Zhu ,
S. N. G. Chu ,
S. A. Nikishin  and
H. Temkin
M. Holtz
Affiliation:
Department of Physics, Texas Tech University, Lubbock, Texas 79409 Nano Tech Center, Texas Tech University, Lubbock, Texas 79409
G. Kipshidze
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
A. Chandolu
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
J. Yun
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
B. Borisov
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
V. Kuryatkov
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
K. Zhu
Affiliation:
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
S. N. G. Chu
Affiliation:
Agere Systems, Murray Hill, NJ 07974
S. A. Nikishin
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
H. Temkin
Affiliation:
Nano Tech Center, Texas Tech University, Lubbock, Texas 79409 Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
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Abstract

We present results on growth and fabrication experiments of AlN/AlGaN superlattices for ultraviolet (UV) optoelectronic devices. Superlattices with extremely short periods have been studied. The AlN “barrier” layers are 0.5 nm thick, and the AlxGa1-xN “wells” are 1.25 nm thick, with x ∼ 0.08. This combination gives an average AlN mole fraction of 0.63 across one full period. The superlattice periods, AlN mole fractions, and energy gaps are determined using TEM, X-ray diffraction, and optical reflectance. They are all consistent with each other. For device fabrication, p-i-n structures are grown doped with Si (n-type) and Mg (p-type). The acceptor activation energy of ∼ 0.2 eV is found. Mesa structures are plasma etched using chlorine chemistry. Etch rates of AlN are ∼ 1/3 those of GaN under identical circumstances. Etch rates of 250 nm/min are used for the device structures. A light emitting diode, with primary emission at 280 nm is reported, and a detector with sensitivity edge at 260 nm are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M10.1
Copyright
Copyright © Materials Research Society 2003

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References

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