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Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates

Published online by Cambridge University Press:  10 February 2011

K. Nishiguchi ,
S. Hara ,
T. Amano ,
S. Hatatani  and
S. Oda
K. Nishiguchi
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Tokyo 152-8552, JAPAN
S. Hara
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Tokyo 152-8552, JAPAN
T. Amano
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Tokyo 152-8552, JAPAN
S. Hatatani
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Tokyo 152-8552, JAPAN
S. Oda
Affiliation:
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Tokyo 152-8552, JAPAN
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Abstract

A new method for the fabrication of nanocrystalline silicon (nc-Si) in SiH4 plasma with very-highfrequency (VHF; 144MHz) excitation is proposed to increase the deposition rate, to control the size, and to minimize size dispersion of nc-Si. Nanocrystalline silicon is formed in the gas phase of the SiH4 plasma cell by coalescence of radicals. Supplying Ar enhances the nucleation of nc-Si because of high efficiency of SiH4 excitation into SiH2 radicals resulting in the nucleation. The deposition rate is thus increased by a factor of 100 to 1012/cm2.h. At the low flow rate of SiH4, smaller nc-Si with small dispersion is obtained. Moreover, when pulsed-SiH4 is supplied into Ar plasma, the growth of nuclei is limited by the time when SiH4 flows. The size of nc-Si and its dispersion are adjusted by the duration of SiH4 gas pulse.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 43
Copyright
Copyright © Materials Research Society 2000

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References

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