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Preparation of Ferroelectric Films of LiNbO3 and SbSI by Artificial Epitaxy.

Published online by Cambridge University Press:  25 February 2011

A.I Pankrashov  and
E.I. Givargizov
A.I Pankrashov
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Leninsky pr.59, Moscow 117333, Russia
E.I. Givargizov
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Leninsky pr.59, Moscow 117333, Russia
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Abstract

Highly–ordered, up to nearly–single–crystalline films of SbSI and LiNbO3 on amorphous substrates (oxidized silicon, fused quartz) were prepared by laser zone–melting recrystallization basing on principles of artificial epitaxy, or graphoepitaxy. Some conclusions are made about tentative orientation mechanism(s) in these processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 565
Copyright
Copyright © Materials Research Society 1992

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References

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