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Preparation and Time Resolved Photoluminescence of Nanoscale InP Islands in In0.48Ga0.52P

Published online by Cambridge University Press:  15 February 2011

K. Eberl ,
A. Kurtenbach ,
K. HÄusler ,
F. Noll  and
W.W. RÜhle
K. Eberl
Affiliation:
Max Planck Institut FKF, PO Box 800665, D-70506 Stuttgart, (Germany)
A. Kurtenbach
Affiliation:
Max Planck Institut FKF, PO Box 800665, D-70506 Stuttgart, (Germany)
K. HÄusler
Affiliation:
Max Planck Institut FKF, PO Box 800665, D-70506 Stuttgart, (Germany)
F. Noll
Affiliation:
Max Planck Institut FKF, PO Box 800665, D-70506 Stuttgart, (Germany)
W.W. RÜhle
Affiliation:
Max Planck Institut FKF, PO Box 800665, D-70506 Stuttgart, (Germany)
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Abstract

Nanoscale InP islands are formed during InP/In0 48Ga0.52P heteroepitaxy due to the lattice mismatch of about 3.7%. The samples are prepared by solid source molecular beam epitaxy on (001) GaAs substrate. Atomic force microscopy measurements show that the size of the islands is typically 15 to 50 nm in diameter and about 5 to 10 nm high depending on the nominally deposited InP layer thickness, which is between 1 and 7.5 monolayers. Transmission electron micrographs show the coherent incorporation into the In0.48Ga0.52P matrix for InP islands with 2.5 monolayers. Resonantly excited time-resolved photoluminescence (PL) measurements of the self assembling InP dots are performed for optical characterisation. The decay times are typically 400 ps. The dependence on excitation power and temperature indicates the quantum dot nature of the InP islands. Finally a pronounced alignment of the InP islands is obtained on strained In0.61Ga0.39P buffer layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 185
Copyright
Copyright © Materials Research Society 1995

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