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Preparation and Characterization of Tin Oxide Nanowires for Gas Sensing

Published online by Cambridge University Press:  21 March 2011

Daihua Zhang ,
Zuqin Liu ,
Chao Li  and
Chongwu Zhou
Daihua Zhang
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
Zuqin Liu
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
Chao Li
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
Chongwu Zhou
Affiliation:
Department of Electrical Engineering -Electrophysics University of Southern California Los Angeles, California 90089, U. S. A
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Abstract

Efficient and reliable laser-ablation approaches for large-scale synthesis of SnO2 nanowires are reported. Transmission electron microscopy (TEM) and x-ray diffraction (XRD) were used to confirm the crystal structure of the nanowires. The results show that these nanowires had uniform diameters around 20 nm and lengths in the order of 10 νm. In addition, field effect transistors have been constructed based on individual SnO2 nanowires. Excellent n-type transistor characteristics have been observed for SnO2 nanowire transistors. Detailed analysis revealed threshold voltages ∼ -50V with on/off ratios as high as 103 at room temperature. These nanowire transistors were further demonstrated to work as sensitive UV detectors and gas sensors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 818: Symposium M – Nanoparticles and Nanowire Building Blocks-Synthesis, Processing, Characterization and Theory , 2004 , M5.20.1
Copyright
Copyright © Materials Research Society 2004

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References

1. Dai, Z. R., Pan, Z. W., and Wang, Z. L., “Novel nanostructures of functional oxides synthesized by thermal evaporation,” Adv. Funct. Mater., 13, 9–24 (2003).Google Scholar
2. Mi, Y., Odaka, H., and Iwata, S., “Electronic structures and optical propertied of ZnO, SnO2, and In2O3 ,” Jpn. J. Appl. Phys., 38, 3453–3458 (1999).Google Scholar
3. Dai, Z. R., Gole, J. L., Stout, J. D., and Wang, Z. L., “Tin Oxide Nanowires, Nanoribbons, and Nanotubes.” J. Phys. Chem. B, 106 (6), 274–1279 (2002).Google Scholar
4. Jian, J. K., Chen, X. L., Xu, T., Xu, Y. P., Dai, L., and He, M., “Growth and morphologies of large-scale SnO2 nanowires, nanobelts and nanodendrites,” Appl. Phys. A, 75, 291–294 (2003).Google Scholar
5. Pan, Z. W., Dai, Z. R., and Wang, Z. L., “Nanobelts of semicconduting noxide,” Science, 291, 1947 (2001).Google Scholar
6. Martel, R., Schmidt, T., Shea, H. R., and Hertel, T., and Avouris, P., “Single- and multi-wall carbon nanotube field-effect transistors,” Appl. Phys. Lett. 73, 2447–2449 (1998).Google Scholar
7. Zhou, C., Kong, J., Yenilmez, E., and Dai, H., “Modulated chemical doping of individual carbon nanotubes,” Science, 290, 1552–1555 (2000).Google Scholar
8. Zhang, D., Li, C., Han, S., Liu, X., Tang, T., Jin, W., and Zhou, C., “Ultraviolet photodetection properties of indium oxide nanowires,” Appl. Phys. A, 77, 163–166 (2003).Google Scholar
9. Kind, H., Yan, H., Messer, B., Law, M., and Yang, P., “Nanowire UV photodector and optical switches,” Adv. Mater., 14, 158–162 (2002).Google Scholar
10. Wang, J., Gudiksen, M. S., Duan, X., Cui, Y., Lieber, C. M., “Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires”, Science 293, 1455 (2001)Google Scholar