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Preparation and Characterization of Microcrystalline and Epitactially Grown Emitter Layers for Silicon Solar Cells

Published online by Cambridge University Press:  09 August 2011

K. Lips ,
J. Platen ,
S. Brehme ,
S. Gall ,
I. Sieber ,
L. Elstner  and
W. Fuhs
K. Lips
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
J. Platen
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
S. Brehme
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
S. Gall
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
I. Sieber
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
L. Elstner
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
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Abstract

We have deposited thin B- and P-doped Si layers by electron cyclotron resonance CVD on c- Si (4 Ωcm, CZ) and on quartz glass substrates at T=325°C. Films grown on quartz glass are of microcrystalline nature with crystalline volume fractions of about 70 % and a resistivity ranging from 0.01 - 10 (Ωcm)−1 depending on doping concentration. The doping efficiency is close to unity with the carrier mobility being independent of doping concentration for both B- and Pdoping. Films grown on c-Si, on the other hand, exhibit perfect homoepitaxial morphology when the gas phase doping concentration exceeds 1000 ppm and 5000 ppm for P- and B-doping, respectively. The quality of the films is tested by preparing thin film emitter solar cells. We find efficiencies above 11 % for cells without ARC. The result are compared to cells with diffused emitters, otherwise prepared with the same technological steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 457
Copyright
Copyright © Materials Research Society 1999

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