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Preparation and Characterization of Bi2VO5.5 Films by MOD Method

Published online by Cambridge University Press:  10 February 2011

E Tokumitsu ,
Y. Takahashi  and
H. Ishiwara
E Tokumitsu
Affiliation:
Precision & Intelligence Lab., Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, JAPAN
Y. Takahashi
Affiliation:
Precision & Intelligence Lab., Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, JAPAN
H. Ishiwara
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, JAPAN
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Abstract

We report the preparation and characterization of Bi2VO5.5(BVO) films grown on SrTiO3, Pt/SiO2/Si, and n-Si(100) substrates by the MOD technique. Since a dielectric constant of BVO is much lower than that of PZT or SBT, BVO is one of the promising candidates for metal-ferroelectric-semiconductor field-effect transistors (MFSFETs). It is found by X-ray diffraction (XRD) measurements that highly (001)-oriented BVO films were obtained and that the crystalline quality was improved with increasing the annealing temperature. The full width at half maximum (FWHM) in the X-ray rocking curve measurements for BVO films on SrTiO3, Pt/SiO2/Si, and n-Si(100) substrates are 0.60, 1.00, and 5.10, respectively. Electrical properties were measured with Pt top electrodes and the typical relative dielectric constant determined by the C-V characteristics is 60-80.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 555
Copyright
Copyright © Materials Research Society 1999

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References

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