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Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

Published online by Cambridge University Press:  26 February 2011

P.-Y. Lu ,
L. M. Williams ,
C.-H. Wang ,
S. N. G. Chu  and
M. H. Ross
P.-Y. Lu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. M. Williams
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C.-H. Wang
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. H. Ross
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Two low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 77
Copyright
Copyright © Materials Research Society 1988

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References

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