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Precise Characterization of Resists and Thin Gate Dielectrics in the VUV Range for 157nm Lithography

Published online by Cambridge University Press:  17 March 2011

Pierre Boher ,
Patrick Evrard ,
Jean Philippe Piel ,
Christophe Defranoux  and
Jean Louis Stehlé
Pierre Boher*
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
Patrick Evrard
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
Jean Philippe Piel
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
Christophe Defranoux
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
Jean Louis Stehlé
Affiliation:
SOPRA S.A., 26 rue Pierre Joigneaux, 92270 Bois Colombes, France
*
Correspondence: Email: [email protected]; Phone: 33 1 46 49 67 00; Fax: 33 1 42 42 29 34
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Abstract

Spectroscopic ellipsometry is one of the most important tools for thin film metrology. It is now intensively used in microelectronics and especially for the microlithographic applications. Instrumentation for the next generation of VUV lithography at 157nm requires special optical setup since oxygen and water are extremely absorbing below 190nm. Recently a new ellipsometer included in a purged glove box to reduce the oxygen and water contamination in the part per million range has been developed. In the VUV range, roughness and interface diffusion become critical since the layer thickness is generally reduced. An independent characterization technique like the grazing x-ray reflectance is then extremely complementary to ellipsometry in this wavelength region. The present paper presents recent results on up to date lithography samples combining the two characterization techniques. Photoresists and gate dielectrics are successively examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 636: Symposium D – Nonlithographic and Lithographic Methods of Nanofabrication-From Ultralarge Scale , 2000 , D9.2.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Boher, P., Piel, J.P., Defranoux, C., Stehle, J.L., Hennet, L., SPIE vol. 2729 (1996).Google Scholar
2. Boher, P., Stehle, J.L, Materials. Science and Engineering, B37, 116 (1996).Google Scholar
3. Boher, P., Defranoux, C., Piel, J.P., Stehle, J.L., SPIE, vol. 3678, p. 126 (1999).Google Scholar
4. Boher, P., Houdy, P., Schiller, C., J. Appl. Physics, 68, p. 6133 (1990).Google Scholar
5. Bridou, F., Pardo, B., J. of X-ray Science and Techn., 4, pp. 200–216 (1994).Google Scholar
6. Boher, P., Piel, J.P., Stehle, J.L., J. of Crystal Growth, 157, pp. 73–79 (1995).Google Scholar
7. Boher, P., Stehle, J.L., Presented at the 1995 MRS Fall Meeting, Boston, Nov. 27 - Dec 1.Google Scholar
8. Boher, P., Stehle, J.L., Hennet, L., Thin Solid Films, 294, pp. 37–42 (1997).Google Scholar
9. Boher, P., Luttmann, M., Stehle, J.L., Hennet, L., Thin Solid Films, 319, pp. 67–72 (1998).Google Scholar
10. Boher, P., Piel, J.P., Defranoux, C., Stehle, J.L., Hennet, L., SPIE vol. 2726, pp. 608–620 (1996)Google Scholar
11. Boher, P., Stehle, J.L., Piel, J.P., Defranoux, C., Hennet, L., SPIE's 1997 International Symposium on Microlithography.Google Scholar
12. Boher, P., Stehle, J.L., Hennet, L., Mat. Res. Soc. Symp. Proc., vol. 446, pp. 369–376 (1997).Google Scholar
13. Boher, P., Stehle, J.L., Phys. Stat. Sol., 170, pp. 211–220 (1998).Google Scholar
14. Barth, J., Johnson, R.L., Cardona, M., Chapter 10 in Handbook of Optical Constants of Solids II, ed. Palik, , Academic Press (1991).Google Scholar
15. Boher, P., Piel, J.P., Evrard, P., Stehle, J.L., in Materials Issues and Modeling for Device Nanofabrication, edited by Merhari, L., Wille, L.T., Gonsalves, K.E., Gyure, M.F., Matsui, S., and Whitman, L.J., (Mater. Res. Soc. Proc. 584, Warrendale, PA, 2000).Google Scholar
16. Boher, P., Piel, J.P., Evrard, P., Defranoux, C., Espinosa, M., Stehle, J.L., SPIE 25th Annual Symposium, 27 February – 3 March (2000).Google Scholar
17. Kobayashi, K., J. Electrochem. Soc., vol. 139, No 5, p. 1693 (1992).Google Scholar
18. Han, L.K., IEEE Electron device letters, vol. 16, No 8, p. 348 (1995).Google Scholar
19. Lo, G.Q., IEEE Electron device letters, vol. 13, No 7 (1992).Google Scholar
20. Mazumder, M.K., J. Electrochem. Soc. Vol. 143, No 1, p. 368 (1996).Google Scholar
21. Boher, P., Piel, J.P., Stehle, J.L., MRS Fall Meeting, November 29 – December 3 (1999).Google Scholar
22. Boher, P., Defranoux, C., Bourtault, S., Stehle, J.L., SPIE vol. 3677, 845 (1999).Google Scholar