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Precipitation of Copper and Cobalt at Grain Boundaries in Silicon

Published online by Cambridge University Press:  25 February 2011

U. Jendrich  and
H. J. Möller
U. Jendrich
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
H. J. Möller
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106
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Abstract

The precipitation of copper and (radioactive) cobalt at low energy grain boundaries in polycrystalline silicon and bicrystals is investigated. The metals are diffused in from a surface source between 800 - 1000 °C and the precipitation after cooling down is studied by TEM (for Cu) and Mößbauer spectroscopy (for Co). The precipitates are metal suicides. For copper it is shown that they appear in form of colonies containing hundreds of precipitates with a particle size between 5-60 nm. In the grain boundary they nucleate preferentially at dislocations and steps. The distribution and size of the precipitates depend on the cooling rate after the diffusion. In the vicinity of the grain boundary the volume is depleted from the impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 579
Copyright
Copyright © Materials Research Society 1990

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References

1 Wu, X.J., Szkielko, W., and Haasen, P.; J.Phys. 43, C1 – 135 (1982)Google Scholar
2 Kazmerski, L.L. and Russell, P.E.: J. de Phys. C1, 43, p. 171, 1983 Google Scholar
3 Aucoutourier, M., Broniatowski, A., Chari, A., Maurice, J.L., in Polycrystalline Semiconductors , ed. by Möller, H.J. et al. , Springer Proc. in Physics 35, 64 (1989)Google Scholar
4 Das, G.: J. Appl. Phys. 44, P. 4459, 1973 Google Scholar
5 Nes, E. and Washburn, J.: J. Appl. Phys. 42, p. 3562, 1971 Google Scholar
6 Nes, E. and Washburn, J.: J. Appl. Phys. 44, P. 3682, 1973 Google Scholar
7 Nes, E. and Solberg, J. K.: J. Appl. Phys. 44, P. 486, 1973 Google Scholar
8 Ryoo, K., Drosd, R., and Wood, W.: J. Appl. Phys. 63, p. 4440, 1988 Google Scholar
9 Seibt, M. and Graff, K.: J. Appl. Phys. 63, 4444, 1988 Google Scholar
10 Solberg, J.K.: Acta Cryst. 24, 684, 1978 Google Scholar
11 Solberg, J.K., Nes, E.: Phil. Mag. A37, p. 465, 1978 Google Scholar
12 Cerva, H. and Wendt, H., Mater. Res. Soc. Proc. 99, 99 (1988)Google Scholar
13 Binary alloy phase diagrams, ed. by Massalski, T.B., Amer. Soc. of Metals, Ohio 1986 Google Scholar
14 Tütken, T., Schröter, W. and Möller, H.J., in Polycrystalline Semiconductors , ed. by Möller, H.J. et al. , Springer Proc. in Physics 35, 108 (1989)Google Scholar
15 Pasemann, M., Bergholz, W., and Schröter, W.; Phys. Stat. Sol. (a) 81, 273 (1984)Google Scholar
16 Weber, E., Appl. Phys. A30, 1 (1983)Google Scholar
17 Bergholz, W., Physica 116B, 312 (1983); and J. Utzig; unpublished resultsGoogle Scholar
18 Möller, H.J.: Phil. Mag. A43, p. 1045, 1981 Google Scholar
19 Möller, H.J.: Cryst. Res. and Technol. 16, p. 259, 1981 Google Scholar
20 Singer, H.H. and Möller, H J.; Suppl. to Trans. Jap. Inst. of Metals 27, 987 (1986)Google Scholar