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Potentially Modulated GaAs/GaNAs/InGaAs Quantum Wells for Solar Cell Applications

Published online by Cambridge University Press:  01 February 2011

Naoto Kobayashi ,
Naoyuki Sasaki  and
Yoshitaka Okada
Naoto Kobayashi
Affiliation:
[email protected], University of Tsukuba, C/o Okadalab. Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan, +81-29-853-6902, +81-29-853-6902
Naoyuki Sasaki
Affiliation:
[email protected], University of Tsukuba, C/o Okadalab. Institute of Applied Physics, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan, +81-29-853-6902, +81-29-853-6902
Yoshitaka Okada
Affiliation:
[email protected], University of Tsukuba, Institute of Applied Physics
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Abstract

We have fabricated GaAs/GaNAs and GaAs/GaNAs/InGaAs MQWs introduced into the intrinsic region of GaAs p-i-n solar cells by atomic H-assisted RF-molecular beam epitaxy. Compared to the more conventional GaAs/InGaAs MQW cells, GaAs/GaNAs/InGaAs MQW cells exhibited improved external quantum efficiencies in the low energy region. This is due to the extension of band edge into longer wavelengths as achieved by use of GaNAs materials.

Keywords

molecular beam epitaxy (MBE)photovoltaicIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-33
Copyright
Copyright © Materials Research Society 2006

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References

REFERNCES

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