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Potential Profile Surveyed Directly by Nanomanipulator with Probing Tip in Al/Poly(3-alkylthiophene)/Au Diodes

Published online by Cambridge University Press:  11 February 2011

K. Kaneto ,
M. Nakagawa  and
W. Takashima
K. Kaneto
Affiliation:
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2–4 Hibikino, Wakamatsu-ku, Fukuoka 808–0196, Japan
M. Nakagawa
Affiliation:
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2–4 Hibikino, Wakamatsu-ku, Fukuoka 808–0196, Japan
W. Takashima
Affiliation:
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2–4 Hibikino, Wakamatsu-ku, Fukuoka 808–0196, Japan
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Abstract

The potential profiles along the channel of Al/Poly(3-hexylthiophene), PHT film/Au diode from Al to Au electrodes have been measured directly using nanomanipulator with potential probing tips. The steep potential cliff is observed at the interface of Al/PHT, indicating the existence of depletion layer with higher resistance than that of bulk region. For the forward bias, the resistance at the depletion layer decreased significantly and the potential gradient in the PHT bulk region is observed above the onset bias of 1 V. It is found that the contact resistance of PHT/Au is unexpectedly large in spite of the ohmic behavior and also for Al/PHT at forward bias. The effect of light on the depletion layer will be also mentioned. It is stressed that the contact resistances of PHT and metals are significantly important to improve the performance of organic electronics devices.

Keywords

conducting polymerspoly(3-hexylthiophene)potential profileSchottky diodenanometric interfaceohmic contact
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 734: Symposia A/B – Defect-Mediated Phenomena in Ordered Polymers – Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers , 2002 , B6.4
Copyright
Copyright © Materials Research Society 2003

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References

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