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Post-transit Analysis of Transient Photocurrents from High-Deposition-Rate a-Si:H Samples

Published online by Cambridge University Press:  01 February 2011

Monica Brinza ,
W.M.M. Kessel ,
Arno H.M Smets ,
M.C.M van de Sanden  and
Guy J. Adriaenssens
Monica Brinza
Affiliation:
Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
W.M.M. Kessel
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Arno H.M Smets
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M van de Sanden
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Guy J. Adriaenssens
Affiliation:
Halfgeleiderfysica, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
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Abstract

An interpretation of post-transit photocurrents in a time-of-flight experiment in terms of the underlying density of localized gap states in the sample is presented for the case of hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. It is pointed out that part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A19.6
Copyright
Copyright © Materials Research Society 2003

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References

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