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Post-Irradiation Annealing and Intergranular Segregation and Desegregation

Published online by Cambridge University Press:  15 February 2011

J. Kameda  and
T. E. Bloomer
J. Kameda
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011, USA
T. E. Bloomer
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011, USA
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Abstract

The effect of post-irradiation annealing (PIA: at 573-958 K for 0.1-1000 h) on the intergranular S and P segregation has been examined in ferritic alloys doped with Cu and/or P, all containing residual S. In a Cu-doped alloy showing no P segregation, the rate and amount of segregated S were promoted more by PIA than thermal annealing. Intergranular P enrichment was observed during an early PIA stage at lower temperatures in P-containing alloys. The intergranular P desegregation and S segregation concurrently occurred at higher PIA temperatures. By applying a modified McLean theory, it is shown that the S segregation in the post-irradiation annealed Cu-doped alloy is controlled by vacancy-enhanced diffusion while the P segregation in P-containing alloys subjected to lower temperature PIA proceeds via mobile P-interstitial complexes. Based on a Gaussian relaxation model, the P desegregation during prolonged PIA at higher temperatures is assisted by the formation and migration of vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 477
Copyright
Copyright © Materials Research Society 1999

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