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Post Implantation Treatment of Silicon Carbide-Based Sensors for Hydrogen Detection Properties Enhancement

Published online by Cambridge University Press:  17 March 2011

I. C. Muntele ,
C. I. Muntele ,
D. Ila ,
R. L. Zimmerman ,
D. B. Poker  and
D. K. Hensley
I. C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
C. I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
R. L. Zimmerman
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
D. K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

Palladium ion implantation was performed at energies of 35 keV, 50 keV and 100 keV, at both room temperature (RT) and 500 °C, on two identical sets of 6H, n-type silicon carbide samples. Then, one set of samples was subjected to a post-implantation sputtering process, in order to eliminate the substrate layer damaged by the palladium ions during implantation. Electrical and micro-Raman measurements have been performed on both sets of samples, aiming for a better understanding of the chemical processes that take place in the presence of hydrogen atmosphere in the chemical sensors prepared this way.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.15
Copyright
Copyright © Materials Research Society 2001

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References

1.Chen, L., Hunter, G. W., and Neudeck, P. G., SiC-based gas sensors, 190th Meeting of the Electron Society, San Antonio, TX, (1996).Google Scholar
2.George, M. A., Ayoub, M. A., Ila, D., Larkin, D. J., Elevated temperature silicon carbide chemical sensors, Spring MRS Meeting, San Francisco, CA, (1999).Google Scholar
3.Muntele, C. I., Ila, D., Williams, E. K., Poker, D. B., Hensley, D. K., Larkin, D. J., and Muntele, I., Fabrication of SiC hydrogen sensor by Pd-implantation, Silicon Carbide and Related Materials - Part 2, ed. Carter, C. H. Jr, Devaty, R. P., and Rohrer, G. S., (Trans Tech Publications, 2000) pp 1443–1446.Google Scholar
4.Muntele, C. I., Ila, D., Williams, E. K., Poker, D. B., and Hensley, D. K., KeV ion beam induced surface modification of SiC hydrogen sensor, Fall 1999 MRS Meeting, Symp. L - Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing, ed. Moss, S., Chason, E. H., Cooper, B. H., Rubia, T. Riaz de la, Harper, J. M. E., Murty, R. (2000).Google Scholar
5.Muntele, C. I., Ila, D., Williams, E. K., Muntele, I. C., Evelyn, A. L., Poker, D. B., and Hensley, D. K., Improved Sensitivity SiC Hydrogen Sensor, Spring 2000 MRS Meeting, Symp. T - Wide-Bandgap Electronic Devices, ed. Shul, R. J., Ren, F., Murakami, M., Pletschen, W. (2000).Google Scholar
6.Ziegler, J. F., Biersack, J. P., SRIM-2000.39.Google Scholar
7.Colthup, N. B., Daly, L. H., and Wiberley, S. E., Introduction to Infrared and Raman Spectroscopy, Third Edition, (Academic Press, 1990) pp 177.Google Scholar