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Positron Beam Technique For The Study Of Defects At The Si/SiO2 Interface Of A Polysilicon Gated MOS System

Published online by Cambridge University Press:  15 February 2011

M. Clement ,
J. M. M. De Nijs ,
H. Schut ,
A. Van Veen ,
R. Mallee  and
P. Balk
M. Clement
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands IRI, Delft University of Technology, P.O. Box 5042, 2600AG Delft, The Netherlands
J. M. M. De Nijs
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
H. Schut
Affiliation:
IRI, Delft University of Technology, P.O. Box 5042, 2600AG Delft, The Netherlands
A. Van Veen
Affiliation:
IRI, Delft University of Technology, P.O. Box 5042, 2600AG Delft, The Netherlands
R. Mallee
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
P. Balk
Affiliation:
DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
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Abstract

This work demonstrates that positrons implanted into a 60 nm n-type polysilicon layer with large grains, can be pushed out of this layer by an externally induced electric field. In the case of a metal-oxide-silicon (MOS) system with a such a polysilicon gate, polysilicon-implanted positrons can be efficiently transported towards the SiO2/Si interface where they all are collected. This technique offers new and interesting possibilities to study defects at the SiO2/Si interface of technologically important MOS systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 143
Copyright
Copyright © Materials Research Society 1997

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