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Positron Annihilation Spectroscopy of As Vacancies in As-Grown GaAs

Published online by Cambridge University Press:  26 February 2011

C. Corbel ,
M. Stucky ,
P. Hautojärvi ,
K. Saarinen  and
P. Moser
C. Corbel
Affiliation:
Centre d'Etudes Nucléaires de Saclay, INSTN, 91191 Gif sur Yvette Cedéx, France
M. Stucky
Affiliation:
Centre d'Etudes Nucléaires de Saclay, INSTN, 91191 Gif sur Yvette Cedéx, France
P. Hautojärvi
Affiliation:
Helsinki University of Technology, Laboratory of Physics, 02150 Espoo, Finland
K. Saarinen
Affiliation:
Helsinki University of Technology, Laboratory of Physics, 02150 Espoo, Finland
P. Moser
Affiliation:
Centre d'Etudes Nucléaires de Grenoble, DRF-PHS, 38041 Grenoble Cedéx, France
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Abstract

Positron lifetime measurements give direct evidence on positron trapping in monovacancy defects in n-type, but not in p-type nor in semi-insulating LEC-grown GaAs. The defects are identified as As vacancies. Two Fermi level controlled transitions have been found in positron lifetime spectra at 0.03±0.01 eV and at 0.10±0.01 eV below the conduction band. We attribute them to the 2-/- and - / 0 ionisation levels of the As vacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 475
Copyright
Copyright © Materials Research Society 1988

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References

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